1991: Papers, Journals, Books

1.Oxidation Process of Hydrogen Terminated Silicon Surface Studied by Thermal Desorption Spectroscopy

• Norikuni Yabumoto, Kazuyuki Saito, Mizuho Morita* and Tadahiro Ohmi*
• NTT LSI Laboratories, *Faculty of Engineering,Tohoku University
• Jpn.J.Appl.Phys.,30,L419(1991)

2. Development of a New Thermal Desorption Gas Analysis System and Its Application to VLSI Materials and Process Evaluation

• Hirakata, Tsuneo; Ajioka, Tsuneo; Hinanaga, Yasushi*
• OKI Electric Industry Co., Ltd., Super LSI Development Center; *Electronic Science Co., Ltd.
• Vacuum, 34, 813 (1991)

～1991: Key Learning Points

1. Physical Properties of Clean Silicon Surfaces and Their Analysis

• Shuzo Sakamoto, Kazuyuki Saito, Mizuho Morita*, Tadahiro Omi*
• NTT LSI Laboratories, *Tohoku University, Faculty of Engineering
• Proceedings of the 1991 Spring National Conference of the Institute of Electronics, Information and Communication Engineers, 5-331, (1991): SC-9-1

Publication Year Unknown: Papers, Journals, Books

1. Pyrolysis Gas Analysis Method Using APIMS

• Yoshiaki Mizokami, Kazuo Nakano, Joji Koike, Tetsuya Ogawa
• Hitachi TEPCO Electronics Systems Division
• Hitachi TEPCO Technical Report, 11, 10 (????)

2. Applications of Thermal Desorption Gas Analysis Technology (TDS)

• Toray Research and Development Center
• Toray Research and Development Center
• Technical Information Publications

3. Improving Interconnect Structure Yield via Siliconized Surface Control (SCS)

• K. Yano, M. Yamanaka, Y. Terai, T. Sugiyama, M. Kubota, M. Endo, and N. Nomura
• Semiconductor Research Center, Panasonic Corporation
• 1993 Symposium on Ultra Large Scale Integration Technology

4. Diffusion Behavior of Ultra-Thin Tin Plating on Conductive Copper Foil

• Masaru Yamashita, Hideo Oku*
• ATEX Co., Ltd., Reliability Materials Technology Department; IBM Japan, Ltd., Yasu Office, Liquid Crystal Technology Department
• Source unknown

5. Anisotropic Etching Technology Achieved via Sulfur Deposition Method

• Shingo Monemura, Tetsuya Tatsumi, Tetsuji Nagayama, Junichi Sato
• Sony Corporation
• Semiconductor World Vol. 12: January 1993

6. Evaluation of Organic Materials on Silicon Wafer Surfaces Using Thermal Desorption Analysis Equipment

• Chizuko Okada, Jiro Tatsuta, Takayuki Shinaguchi
• Mitsubishi Materials Corporation, Central Research Laboratory
• Source Unspecified

7. Model Study of Insulating Film Growth: Chemical Vapor Deposition of SiO₂ Using TEOS as Precursor

• J.E. Crowell, H-C. Cho, F.M. Cascarano, L.L. Tedder, and M.A. Logan*
• Department of Chemistry, University of California, San Diego, *Lam Research Corporation Advanced Research Center
• Source Unspecified

8. Evaluation of Adsorbed Molecules on Silicon Wafers

• Norikuni YABUMOTO
• NTT Interdisciplinary Research Laboratory
• Source Unspecified

9. Investigation of Corrosion Inhibition Mechanisms in Downstream Environments of O₂ + H₂O Using TDS Technology

• Hidehiro Kojiri, Jiro Matsuo*, Koji Watanabe, Moritaka Nakamura
• Fujitsu, *Fujitsu Laboratories
• Technical Report of the Institute of Electronics, Information and Communication Engineers. SDM, Silicon Materials and Devices 94(11), 39-46, 1994-04-21

10. Thermal Desorption Analysis of Adsorbed Components on Silicon Wafer Surfaces

• Shubun Yabu
• NTT LSI Laboratories
• Source Unspecified

Publication Year Unknown: Conference Abstracts

1. Characterization of Colored Hydroxyapatite

• Tsuyoshi Ishikawa
• New Ceramics Division, Asahi Optical Co., Ltd.
• Hydroxyapatite Research Association

2. Recovery of Useful Hydrocarbons from Oil Palm Waste Using ZrO₂ Supported FeOOH Catalyst

• Takao Masuda, Yumi Kondo, Masahiro Miwa, Makoto Mukai, Kenji Hashimoto, and *Mikio Takano
• Department of Chemical Engineering, Graduate School of Engineering, Kyoto University & *Institute for Chemical Research, Kyoto University
• Proceedings of the 16th International Symposium on Chemical Reaction Engineering

3. Surface Reactions During Silicon Dioxide Pore Etching Processes

• Norio Hirakata, Naoki Ikegami
• OKI Electric Industry Co., Ltd., Ultra-LSI Research and Development Center
• Proceedings of the 44th Semiconductor Professional Seminar, p. 139